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US Patent for Method for manufacturing silicon carbide single

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source

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A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a

Pressure dependence of the silicon carbide synthesis

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US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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A Method to Adjust Polycrystalline Silicon Carbide Etching

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Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon

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