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US7998866B2 - Silicon carbide polishing method utilizing

The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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Documentation: List by Chemical Name: SILICON CARBIDE

The proposed total particulate PEL for silicon carbide was 10 mg/m3, and dust administered by intraperitoneal injection to guinea pigs produced no

Strain in Graphene Grown on Nitrogen-Seeded Silicon Carbide

By pre-treating the silicon carbide in a process that leaves small amounts of nitrogen on its surface, the subsequently grown graphene is made to wrinkle

Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

Low-Damage Etching of Silicon Carbide in Cl2-Based Plasmas

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Reliability Analysis of Silicon Carbide Power Devices

201953-Electrical Engineering Seminar: Reliability Analysis of Silicon Carbide Power Devices However, in recent years, power semiconductor devic

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zone-folded acoustic phonons in 4H and 6H silicon carbide

abstract = We investigate the dielectric properties of the 4H and 6H polytypes of silicon carbide in the 0.1-19 THz range, below the fundamental

Keywords s: silicon carbide;composites;hot isostatic pressing

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Subsurface Damage in Polishing Process of Silicon Carbide

Gu, Y.; Zhu, W.; Lin, J.; Lu, M.; Kang, M., 2018: Subsurface Damage in Polishing Process of Silicon Carbide Ceramic Subsurface damage (SSD)

Silicon Carbide filter technology

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Silicon carbide solution | Nature Chemistry

Comparing microwave-heated reactions in glass and silicon carbide vials suggests that heating effects alone are responsible for the benefits of

SCTW35N65G2V - Silicon carbide Power MOSFET 650 V, 45 A, 55

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Low-Damage Etching of Silicon Carbide in Cl2-Based Plasmas

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Silicon Carbide Foam | Products Suppliers | Engineering360

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